Low Power and Reliable SRAM Memory Cell and Array Design - Springer Series in Advanced Microelectronics - Koichiro Ishibashi - Books - Springer-Verlag Berlin and Heidelberg Gm - 9783642195679 - August 18, 2011
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Low Power and Reliable SRAM Memory Cell and Array Design - Springer Series in Advanced Microelectronics 2011 edition

Koichiro Ishibashi

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Low Power and Reliable SRAM Memory Cell and Array Design - Springer Series in Advanced Microelectronics 2011 edition

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

310 pages, biography

Media Books     Hardcover Book   (Book with hard spine and cover)
Released August 18, 2011
ISBN13 9783642195679
Publishers Springer-Verlag Berlin and Heidelberg Gm
Genre Aspects (Academic) > Science / Technology Aspects
Pages 144
Dimensions 155 × 235 × 13 mm   ·   362 g
Language French  
Editor Ishibashi, Koichiro
Editor Osada, Kenichi

See all of Koichiro Ishibashi ( e.g. Hardcover Book and Paperback Book )